• image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
  • image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
-
Tape & Reel (TR)
2000
:
:

1

$7.0448

$7.0448

10

$5.9136

$59.1360

100

$4.7824

$478.2400

500

$4.2560

$2,128.0000

1000

$3.6400

$3,640.0000

2000

$3.4272

$6,854.4000

image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
image of Single FETs, MOSFETs>SIJH5700E-T1-GE3
SIJH5700E-T1-GE3
SIJH5700E-T1-GE3
Single FETs, MOSFETs
Vishay / Siliconix
N-CHANNEL 150 V (D-S) 175C MOSFE
-
Tape & Reel (TR)
0
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CasePowerPAK® 8 x 8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 20A, 10V
Power Dissipation (Max)3.3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 75 V
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