• image of Memory>BY25Q32ESWIG(R)
  • image of Memory>BY25Q32ESWIG(R)
BY25Q32ESWIG(R)
32 MBIT, 3.0V (2.7V TO 3.6V), -4
-
Tape & Reel (TR)
3000
:
:

1

$0.9072

$0.9072

10

$0.8064

$8.0640

25

$0.7504

$18.7600

100

$0.6160

$61.6000

250

$0.5712

$142.8000

500

$0.4816

$240.8000

1000

$0.3920

$392.0000

3000

$0.3472

$1,041.6000

6000

$0.3248

$1,948.8000

15000

$0.3136

$4,704.0000

30000

$0.3024

$9,072.0000

image of Memory>BY25Q32ESWIG(R)
image of Memory>BY25Q32ESWIG(R)
BY25Q32ESWIG(R)
BY25Q32ESWIG(R)
Memory
BYTe Semiconductor
32 MBIT, 3.0V (2.7V TO 3.6V), -4
-
Tape & Reel (TR)
0
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Memory Size32Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency120 MHz
Memory FormatFLASH
Supplier Device Package8-WSON (5x6)
Write Cycle Time - Word, Page50µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time11.5 ns
Memory Organization4M x 8
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