• image of Memory>BY25Q128ASWIG(R)
  • image of Memory>BY25Q128ASWIG(R)
BY25Q128ASWIG(R)
128 MBIT, 3.0V (2.7V TO 3.6V), -
-
Tape & Reel (TR)
3000
:
:

3000

$0.9296

$2,788.8000

6000

$0.8960

$5,376.0000

image of Memory>BY25Q128ASWIG(R)
image of Memory>BY25Q128ASWIG(R)
BY25Q128ASWIG(R)
BY25Q128ASWIG(R)
Memory
BYTe Semiconductor
128 MBIT, 3.0V (2.7V TO 3.6V), -
-
Tape & Reel (TR)
0
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency108 MHz
Memory FormatFLASH
Supplier Device Package8-WSON (5x6)
Write Cycle Time - Word, Page50µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time7 ns
Memory Organization16M x 8
captcha

+86-19928849014

点击这里给我发消息 点击这里给我发消息
0