• image of Single FETs, MOSFETs>AS1M025120P
  • image of Single FETs, MOSFETs>AS1M025120P
AS1M025120P
N-CHANNEL SILICON CARBIDE POWER
-
Tube
30
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1

$42.5936

$42.5936

10

$37.8560

$378.5600

100

$33.1072

$3,310.7200

image of Single FETs, MOSFETs>AS1M025120P
image of Single FETs, MOSFETs>AS1M025120P
AS1M025120P
AS1M025120P
Single FETs, MOSFETs
Anbon Semiconductor
N-CHANNEL SILICON CARBIDE POWER
-
Tube
124
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 1000 V
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